M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1214 7-95 (first published)

7-95 (first published)

本文書はSafetyBUS pプロトコルの使用を定めてSafetyBUS pネットワーク上の共通デバイス・モデル（CDM）や適切な特定デバイス・モデル（SDM）にて定められた外部から目に見えるデバイス構造や挙動を示す。

This edition was approved for publication by the global Audits and Reviews Subcommittee on October 17

SEMI M17-0704 (technical revision)

which includes gases and liquids

M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1214 7-95 (first published)This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density InP wafers.