M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current

M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - CurrentShrinkage and advanced integration of semiconductor components demand lower metal contamination levels in component fabrication processes and in base silicon wafer substrates. The industry has for some time widely employed surface photovoltage (SPV) measurements of minority carrier diffusion lengths as a technique to assess metal impurities in silicon wafers. Samples, however, often require surface preparation prior to SPV measurements because SPV

静電気の数々の制御方法は，静電気を許容レベル以下に制御するために装置設計に組み込むことができる。このガイドは，基本的には装置製造業者が装置設計を行う際に使用される。

This marking symbol is marked in a manner and location to avoid affecting the user patterning process

org in August 2011

This Test Method is particularly applicable to clean

Semiconductor and FPD factories require high levels of power quality due to the sensitivity of equipment and process controls

5-0302 (Reapproved 0308)

It includes a specific transfer command state model and stocker controller state model as the basis for all equipment of this class

by clarifying the positional relationship among equipment

it has been replaced by SEMI C71

半導体プロセス技術は，より微細化形状に向かい続けるであろう。静電気の許容可能なレベルは，製造プロセスの微細化に伴って低くなる。この文書は，設備の静電気の限界値が製造中の製品に対して適切であることを確認するのに役立つ。International Technology Roadmap for Semiconductors(ITRS)に含まれる形状サイズを参照。

SEMI E1-0697 (technical revision)

本仕様は，global Liquid Chemicals Committeeで技術的に承認されている。現版は2010年8月27日，global Audits and Reviews Subcommitteeにて発行が承認された。2010年10月にwww