Al2O3 - Sapphire Wafer <0001> 2"dia x 0.43mm 1SP - ALC50D043C1 Orientation M-Plane (1-100) Top Cap: 25

Top Cap: 25

1600°C ( in air) continuous

Mica Disks Highest Grade V1

Precaution:  R plane sapphire wafer is easy to cleave compared with C plane's

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Al2O3 - Sapphire Wafer <0001> 2"dia x 0.43mm 1SP - ALC50D043C1 Orientation M-Plane (1-100) Top Cap: 25Features: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Orientation: C axis[0001] off M plane(1 100) 0. 2o+ 0. 1o Diameter: 50. 8mm + 0. 1mm Thickness: 430um + 15 um Major Flat: A axis[11 20]+ 0. 2o Major Flat Length: 16mm + 1. 0mm Surface Finish: Front side: Epi polished , Ra< 0. 3 nm(by AFM); Back side: Fine ground, Ra= 0. 4 1. 2 um TTV: <= 7um Bow:<= 10 um WARP<=