GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 sp Bi12GeO20 (BGO20) Cutting Depth Max

Cutting Depth     Max

Overall dimension: 47''W x 29''D x 59''H

:  <100> +/-2 o

Material: Aluminum

Pressing die installation schematic

GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 sp Bi12GeO20 (BGO20) Cutting Depth MaxGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 4" dia x 0. 55 mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 55 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: 4120 5860 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP