Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating MTI diamond blade is hot

MTI diamond blade is hot pressed and sintered by full diamond powder which has a five times longer service life than that of ordinary edge sintered diamond blades

Set pressure low limit and high limit on digital pressure gauge

Two pushing rods highly polished and perfectly fitted into die

2 side polished

Working Voltage 208 - 240V AC (single-phase)

Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating MTI diamond blade is hotFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 25(+ 0. 05) mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic