Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1 Slurry Mixers Polishing: one side polished

Polishing:                      one side polished

Continuous current: 40A   Max

Surface of SrTiO3 substrate before Step treatment (AFM)

Please consider to have Seals metal threads to prevents leakage for MTI Flange (MTI-SEAL-MT)

Resistivity:                    >1

Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1 Slurry Mixers Polishing: one side polishedSingle crystal Si Conductive type: N type, P doped, Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 3 0. 35 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw