GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer 4N/15mm wide at 200 x

4N/15mm wide at 200 x 0

One pack of 48173 accessories

Perfect for ferroelectric epitaxial thim film

This structure has a high surface area

Motor speed: 10 - 70 rpm programmable

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer 4N/15mm wide at 200 xGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: undoped, Conductor type: SI (Semi insulating ) Carrier Concentration: N A Mobility: 3710 6230 cm^2 V. S EPD: N A Resistivity: (0. 8 4. 8)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces