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Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1 Fe2O3 Mobility: 1660-2940 cm^2
Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1 Fe2O3 Mobility: 1660-2940 cm^2
$67.58
Description
Mobility: 1660-2940 cm^2
Lithium-Tin (Li-Sn) Alloy chip is can be used as anode candidate for Li-ion battery
look for GHS elements of pictograms
Growing Method: CZ
Shapes & Sizes
Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1 Fe2O3 Mobility: 1660-2940 cm^2Single crystal Si Conductivity: P type ( B doped) Resistivity: 1~10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <111> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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