Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005ohm.cm Target A-Z The second range: 1 A

The second range: 1 A - 6 A

Surface Polishing:          one side epi polished

Technical Specifications

x Height) Case: 26mm(OD) x 25

Working Temperature 1100ºC Max

Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005ohm.cm Target A-Z The second range: 1 AGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 0007 0. 005 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other