GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) A complete calibration system

A complete calibration system

05'' thickness and 1

:  357 mm / 14 inch

Outside Dimension after sealing: 45 Width x 62 Length (mm)

Conductor type: P-type

GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) A complete calibration systemGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5