GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3 Thermal Evaporation Please browse our FH-60 for

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Please click on the below pictures to view the structure Slot Die

Orientation:                  <010> +/-1°

2 ppm/ deg C

Fabrication:      Ion exchange

GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3 Thermal Evaporation Please browse our FH-60 forGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (2. 67 3. 27) x 10^18 cm^3 Mobility: 116 125 cm^2 V. S EPD: <5000 cm^2 Resistivity: (1. 64 1. 88)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces