GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2 TGA Dimensions

Dimensions

The crimper is driven by compressed inert gas or air for various types of coin cells such as CR2016

which will help prevent damages and prolong the integrity of the material

Model Number EQ-Die-12D-316 Max

Impurity:          Impurity REO<0

GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2 TGA DimensionsGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 5mm(+ _ 0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)+_30' Edge Orientation: (110)1 Polished: Both sides polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ?3 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100>