Si Wafer (110), 2" dia x 0.5 mm t, 2SP, P type/ B doped, R:0.1-1.0ohm-cm Glovebox Specifications Materials The case and

Specifications Materials The case and cap are made of Nickel plated A3 steel

Thickness: Max

Lattice matched In/Ga alloy layer of N-type InGaAs(undoped)

Female 1/8 BSPP 6 TI-SPC12-PG Pirani gauge

Resistivity:                  1- 20 ohm-cm

Si Wafer (110), 2" dia x 0.5 mm t, 2SP, P type/ B doped, R:0.1-1.0ohm-cm Glovebox Specifications Materials The case andSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 0. 1 1. 0 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (110) + 1o Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma