Si wafer (100), 3 "dia x0.38 mm, 1sp, N type, As-doped, R:0.001-0.005 ohm.cm YSZ (Yittrium stabilized ZrO2) Face Orientation: (100) +/- 0

Face Orientation:                        (100) +/- 0

9% purity any inert gas (Nitrogen

All pressing dies are made by high-stretched carbon steel to achieve high hardness to meet essential requirements of making ceramic or metal samples

Current Collector (Substrate) Aluminum foil Cathode material LiNiCoMnO2 Dimensions 670mm(L) x 56mm(W) x 0

Orientation: M Plane

Si wafer (100), 3 "dia x0.38 mm, 1sp, N type, As-doped, R:0.001-0.005 ohm.cm YSZ (Yittrium stabilized ZrO2) Face Orientation: (100) +/- 0Single crystal Si Conductivity: N type ( As doped) Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 38 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing