Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm High-Throughput Battery Research 4 mm x 1

4 mm  x 1

Body liner: Transparent quartz body allows you to perform In-situ Raman and Infrared Spectroscopy

It may be worth testing the two types of crystals when commencing new thin film processes

but also be useful for studying the electrolyte filling

Growing Method:              VGF

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm High-Throughput Battery Research 4 mm x 1Single crystal Si, (CZ) Conductivity: P type ( B doped) Resistivity: 0. 004 0. 006 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 5mm Orientation: (111) 4 + 0. 5 degree off Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner