Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 and/or turbulence effects

and/or turbulence effects

BS EN IEC 60077‑5 gives the classification of fuse-links used for the protection of semiconductor devices

fluid resistance

mapping the legal and the technical concepts

Large or industrial grade machine manufacturers

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 and/or turbulence effects1 Scope This International Standard specifies a secondary ion mass spectrometric method for the determination of boron atomic concentration in single crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 1016 atoms cm3 to 1 1020 atoms cm3.