GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP Prismatic Cell pic 1 pic 2 pic

pic 1                         pic 2                          pic 3                       Warranty 12 months

Compliance  CE Certified Warranty One year limited with lifetime support

This aluminum foam has the advantages of low density

Application The cylinder cells are grooved it by MSK-500 and then crimped by MSK-510

1 side polished

GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP Prismatic Cell pic 1 pic 2 picGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5 x 5 x 0. 35 mm Polishing: one side polished Doping: Te doped Conductor type: N type Carrier Concentration: (3. 04 5. 98) x 10^17 cm^3 Mobility: (3330 3850) cm^2 V. S Resistivity: (3. 14 5. 34) E 3 ohm cm EPD: < 5000 cm^2 Note: EPI polishing RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces