LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2 Be Surface Polishing: two sides epi

Surface Polishing:           two sides epi polished

tube to 8mm O

Resistivity:                >106 ohm-cm

Avoid using with nonhomogenous solution systems

Dimension  Click the picture to see

LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2 Be Surface Polishing: two sides epiLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 1. 0 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5