Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm Max. current +3 A Outside (L × W ×

Outside (L × W × H): 530 mm × 510mm × 660mm

Surface roughness:  < 5 A

and milling sintered ceramic samples up to 0

Surface roughness:  Ra  <10A

Please clean the mould via ethanol after the completion of each experiment

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:1-10 ohm.cm Max. current +3 A Outside (L × W ×Thermal oxide Research Grade , about 80 % useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" dia + 0. 5 mm x 0. 525 mm th Orientation: (100) + 0. 5o Polish: one side