Home
»
»
Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Size: 34 mm Diameter x
1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Size: 34 mm Diameter x" loading="eager" fetchpriority="high" decoding="async"/>
Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Size: 34 mm Diameter x
$107.56
Description
Size: 34 mm Diameter x 0
Single crystal LiAlO2
ID: 230 mm (see photo below)
Size: 10x10x 0
Working Voltage 208 - 240V AC (single-phase)
Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te Size: 34 mm Diameter xSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 with 10 degree miscut towards <112><110>, 4 ){kind=link}